samhop micrpelectronics corp. product summary v dss i d r ds(on) (m ) typ 30v 13a 8.5 @ vgs=4.5v 5.5 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel logic level enhancement mode field effect transistor ver 3.2 www.samhop.com.tw mar,02,2011 1 details are subject to change without notice. STM4884 g r e r r p p r p p o r r so-8 1 4 3 2 1 d d d d g s s 5 6 7 8 s symbol v ds v gs i dm e as 50 w a p d c 2.5 -55 to 150 i d units parameter 30 13 52 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics 45 mj absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja a t a =25 c a 10.5 t a =70 c w 1.6 t a =70 c v dgr 30 v drain-gate voltage (r gs =20k )
www.samhop.com.tw mar,02,2011 2 STM4884 ver 3.2 symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) 1.3 v 5.5 g fs 31 s v sd c iss 1200 pf c oss 410 pf c rss 316 pf q g 24 nc 43 nc q gs 62 nc q gd 44 t d(on) 29 ns t r 2.5 ns t d(off) 10 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =15v i d =6.5a v gs =10v r gen =4.7 ohm total gate charge rise time turn-off delay time v ds =24v,i d =13a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =6.5a v ds =10v , i d =6.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =1ma v ds =24v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage i d =10ma , v gs =0v reverse transfer capacitance on characteristics 2.5 v gs =4.5v , i d =6.5a 7 8.5 11.5 m ohm c f=1.0mhz c v ds =24v,i d =13a, v gs =10v source-drain ratings and characteristics v gs =0v,i s =13a 0.92 1.2 v 1.8 bv dsx 10 v i d =10ma , v gs =-20v i drp drain reverse current - pulse 52 a a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=100uh,v dd = 20v. _ _ notes _
STM4884 ver 3.2 www.samhop.com.tw mar,02,2011 3 drain current i d (a) drain-source voltage v ds (v) i d -v ds forward transfer admittance ! ! ! ! ! ! . yfs . (s) gate-source voltage v gs (v) 110 100 1 10 100 0.1 v ds =10v drain-source on resistance r ds(on) (m ) 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 vgs=3 v vgs =2. 5v vgs=3.5 v vgs =5v vgs =10v 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 vgs =3v vgs=2 .5v vgs= 3.5v vgs=5v vgs= 10v vgs =4v 35 28 21 14 7 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 id=1 3a 6. 5a 3a 0.1 110 100 1 10 100 0.1 0.1 vgs=4.5 v vgs=10v drain current i d (a) drain-source voltage v ds (v) i d -v ds drain current i d (a) drain-source voltage v ds (v) i d -v gs v ds -v gs gate-source voltage v gs (v) drain current i d (a) drain current i d (a) . y fs . -i d r ds(on) -i d
STM4884 ver 3.2 www.samhop.com.tw mar,02,2011 4 drain-source voltage v ds (v) 1000 100 capacitance c (pf) drain-source voltage v ds (v) drain-source voltage v ds (v) total gate charge qg (nc) 100 10 0.1 0 -0.3 -0.6 -0.9 -1.2 -1.5 1 18 15 12 9 6 3 0 -80 80 40 -40 0 120 160 ambient temperature ta ( c) r ds(on) (m ) 110 100 0.1 1000 v gs =0v 1 3 4.5 10 10000 crss ciss coss 15 12 9 6 3 0 50 40 30 20 10 0 048 12 16 20 24 28 32 gate threshold voltage vth (v) ambient temperature ta ( c) drain power dissipation p d (w) 3.0 2.4 1.8 1.2 0.6 0 0 40 80 120 160 -80 80 40 -40 0 2.5 2.0 1.5 1.0 0.5 0 120 160 i d = 3, 6.5, 13a v gs =10v v gs =4.5v r ds(on) ta i d = 3, 6.5, 13a drain reverse current i dr (a) i dr v ds drain-source on resistance capacitance v ds vth ta ambient temperature ta ( c) gate-source voltage v gs (v) p d ta dynamic input/output characteristics v ds = v gs i d = 1ma i d = 13a v dd =24v v dd =24v 12 6 12 6
STM4884 ver 3.2 www.samhop.com.tw mar,02,2011 5 drain current id (a) drain-source voltage v ds (v) 0.1 1 10 30 10 1 0.1 100 v gs =10v single pulse t a =25 c dc r ds (on) li mit 0.01 t=1ms t = 1 00us t=1 00ms t=10s safe operating area 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board single pulse pulse width tw (s) rth-tw transient thermal impedance rth ( c/w)
www.samhop.com.tw mar,02,2011 6 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.75 0.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l hx45 o a a1 a2 c d e e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020 STM4884 ver 3.2
www.samhop.com.tw mar,02,2011 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0 +0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 STM4884 ver 3.2
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